features l compact and high cost-performance surface mount package: 4.4 9.1 1.6 t mm l pixel pitch: 12.5 m pixel height: 250 m l number of pixels: 512 ch l single 5 v power supply operation available l video data rate: 5 mhz max. l simultaneous charge integration l shutter function l high sensitivity, low dark current, low noise l built-in timing generator allows operation with only start and clock pulse inputs l spectral response range: 400 to 1000 nm note: consult with the nearest sales office if an evaluation board is needed. applications l barcode readers l displacement meters l refractometers l interferometers l miniature spectrometers image sensor small plastic package cmos image sensor cmos linear image sensor S10227 1 absolute maximum ratings (ta=25 c) parameter symbol value unit supply voltage vdd -0.3 to +6 v clock pulse voltage v(clk) -0.3 to +6 v start pulse voltage v(st) -0.3 to +6 v operating temperature* 1 topr -25 to +85 c storage temperature* 1 ts t g -25 to +85 c *1: no condensation dimensions parameter value unit number of pixels 512 - pixel pitch 12.5 m pixel height 250 m active area length 6.4 mm
cmos linear image sensor S10227 2 recommended terminal voltage parameter symbol min. typ. max. unit supply voltage vdd 4.75 5 5.25 v high vdd - 0.25 vdd vdd + 0.25 v clock pulse voltage low v(clk) - 0 - v high vdd - 0.25 vdd vdd + 0.25 v start pulse voltage low v(st) - 0 - v electrical characteristics [ta=25 c, vdd=5 v, v(clk)=v(st)=5 v] parameter symbol min. typ. max. unit clock pulse frequency f(clk) 0.1 - 5 mhz video data rate vr - f(clk) - mhz power consumption p - 150 - mw conversion efficiency ce - (1.6) - v/e - electrical and optical characteristics [ta=25 c, vdd=5 v, v(clk)=v(st)=5 v] parameter symbol min. typ. max. unit spectral response range 400 to 1000 nm peak sensitivity wavelength p - 700 - nm dark output voltage* 2 vd - 0.5 5 mv saturation output voltage vsat - 4.2 - v readout noise nr - 0.4 - mv rms offset output voltage vo 0.6 - v photo response non-uniformity* 3 * 4 prnu - - 8.5 % *2: storage time ts=10 ms *3: uniformity is defined under the condition that all pixels in the device are uniformly illuminated by light which is 50% of the saturation exposure level and using 510 pixels excluding both ends pixels as follows: prnu= ? x/x 100 (%) x: average output of 510 pixels excluding the pixels at both ends ? x: difference between x and maximum or minimum output *4: measured with a tungsten lamp of 2856 k block diagram kmpdc0167ea clk timing generator shift register hold circuit charge amp array st 8 1234 photodiode array 511 512 7 gnd 1 6 5 vdd eos video 4 spectral response (typical example) wavelength (nm) relative sensitivity (%) (ta=25 ?c) 400 500 600 700 900 800 1000 1100 1200 0 20 40 60 80 100 kmpdb0258ec
cmos linear image sensor S10227 3 tpw(clk), t1 tlw(st) 2.5 clocks 8.5 clocks integration time 1 2 3 4 13 clk st video eos clk st clk video 14 15 thw(st) 15 clocks tf(clk) tf(st) tr(st) tr(clk) tvd2 tvd1 tlw(st) thw(st) tpw(st) tpw(clk) tpw(st) 512 trig (0.9) 0.3 0.15 2.54 1.6 0.2 epoxy resin photosensitive surface print circuit board index mark 2.54 2.54 2.54 electrodes (8 ) 0.5 gnd nc nc vdd video eos st clk tolerance unless otherwise noted: 0.1 values in parentheses indicate reference value. 4.4 9.1 active area (6.4 0.25) 1 ch 4.55 0.2 512 ch 1.437 0.2 dimensional outlines (unit: mm) timing chart kmpdc0166eb parameter symbol min. typ. max. unit start pulse width tpw(st) t1 530 - - ns start pulse high width thw(st) t1 8 - - ns start pulse low width tlw(st) t1 15 - - ns start pulse rise and fall time tr(st), tf(st) 0 20 30 ns clock pulse width tpw(clk), t1 200 - - ns clock pulse rise and fall time tr(clk), tf(clk) 0 20 30 ns video delay time 1 tvd1 - 30 - ns video delay time 2 tvd2 - 40 - ns note: the internal circuit starts operating at the rise of clk pulse immediately after st pulse sets to low. the integration time equals the high period of st pulse plus 6 clk cycles. kmpda0213eb
cmos linear image sensor S10227 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamats u.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv?gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8 -509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81 -733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(x)" which means tentative specifications or a suffix "(z)" which means developmental specifications. ?2010 hamamatsu photonics k.k. cat. no. kmpd1099e05 jun. 2010 dn 4 pin connection pin no. name description input/output ? gnd ground input ? nc - ? nc - ? vdd power supply voltage input ? video video signal output output ? eos end of scan (shift register end-of-scan signal pulse generated after reading signals from all pixels) output ? st start pulse (pulse for initializing the internally generated pulses that set the timing to start reading pixel signals) input ? clk clock pulse (pulse for synchronizing the internally generated pulses that control sensor operation frequency) input precautions for use (1) electrostatic countermeasures this device has a built-in protection circuit as a safeguard against static electrical charges. however, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. protect this device from surge voltages which might be caused by peripheral equipment. (2) package handling the package surface is easily scratched, so handle this device carefully. dust or grime on the light input window might cause non-uniform sensitivity. to remove dust or grime, blow it off with compressed air. (3) reflow soldering to prevent damaging this device during reflow soldering, perform soldering within 24 hours after opening the moisture-proof packing. the extent of damage that might occur during reflow soldering depends on the pc board size and reflow oven conditions. check the device for any damage before reflow soldering. (4) surface protective tape protective tape is affixed to the surface of this product to protect the active area. after assembling the product, remove the tape before use. 2.54 2.54 2.54 (8 ) 0.7 2.54 kmpdc0257ea 0 50 150 100 200 250 300 350 time (s) 0 250 200 150 100 50 temperature ( ? c) recommended land pattern temperature profile of reflow soldering kmpdb0261ea
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